- 您现在的位置：买卖IC网 > Sheet目录462 > IXTH75N15 (IXYS)MOSFET N-CH 150V 75A TO-247
High Current
Power MOSFET
IXTH 75N15
IXTT 75N15
V DSS
I D25
R DS(on)
= 150 V
= 75 A
= 23 m ?
N-Channel Enhancement Mode
Symbol
Test Conditions
Maximum Ratings
TO-247 AD (IXTH)
V DSS
V DGR
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M ?
150
150
V
V
V GS
V GSM
I D25
I DM
I AR
E AR
Continuous
Transient
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
± 20
± 30
75
300
75
60
V
V
A
A
A
mJ
TO-268 (IXTT)
(TAB)
E AS
dv/dt
P D
T J
T JM
T stg
T C = 25 ° C
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS ,
T J ≤ 150 ° C, R G = 2 ?
T C = 25 ° C
1.5
5
330
-55 ... +150
150
-55 ... +150
J
V/ns
W
° C
° C
° C
G = Gate
S = Source
Features
G
S
D = Drain
TAB = Drain
(TAB)
T L
1.6 mm (0.062 in.) from case for 10 s
300
° C
International standard packages
M d
Weight
Mounting torque
TO-247 AD
TO-268
1.13/10 Nm/lb.in.
6 g
4 g
Low R DS (on) HDMOS TM process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Symbol
Test Conditions
Characteristic Values
Advantages
(T J = 25 ° C, unless otherwise specified)
V DSS V GS = 0 V, I D = 250 μ A
Min. Typ. Max.
150
V
Easy to mount
Space savings
V GS(th)
I GSS
I DSS
V DS = V GS , I D = 250μ A
V GS = ± 20 V DC , V DS = 0
V DS = V DSS
V GS = 0 V
T J = 25 ° C
T J = 125 ° C
2.0
4.0
± 100
25
250
V
nA
μ A
μ A
High power density
R DS(on)
V GS = 10 V, I D = 0.5 I D25
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
23
m ?
? 2004 IXYS All rights reserved
DS98948C(05/04)
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
IXTH76N25T
MOSFET N-CH 250V 76A TO-247
IXTH88N15
MOSFET N-CH 150V 88A TO-247AD
IXTH8P50
MOSFET P-CH 500V 8A TO-247
IXTH90N15T
MOSFET N-CH 150V 90A TO247
IXTI12N50P
MOSFET N-CH 500V 12A I2-PAK
IXTJ36N20
MOSFET N-CH 200V 36A TO-247AD
IXTK102N30P
MOSFET N-CH 300V 102A TO-264
IXTK110N30
MOSFET N-CH 300V 110A TO-264
相关代理商/技术参数
IXTH76N25T
功能描述:MOSFET 76 Amps 250V 39 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTH76P10T
功能描述:MOSFET -76 Amps -100V 0.024 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTH7P45
制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 450V V(BR)DSS | 7A I(D) | TO-218VAR
IXTH7P50
功能描述:MOSFET -7 Amps 500V 1.5 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTH80N20L
功能描述:MOSFET Standard Linear Power MOSFETs RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTH86N20T
功能描述:MOSFET 86 Amps 200V 29 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTH88N15
功能描述:MOSFET 88 Amps 150V 0.022 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTH88N30P
功能描述:MOSFET 88 Amps 100 V 0.04 Ohms Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
